Symposium K
Non-volatile Memory Devices: materials, emerging concepts and applications
Co-Chairs:
Marco BERNASCONI, University of Milano-Bicocca, Italy
Blanka MAGYARI-KÖPE, Stanford University, USA
Hideo OHNO, Tohoku University, Japan
Programme Chair:
Sabina SPIGA, CNR-IMM, Agrate Brianza, Italy
Members:
Marin ALEXE, The University of Warwick, UK
I-Wei CHEN, University of Pennsylvania, USA
Wen-Chang CHEN, National Taiwan University, Taiwan
Albert CHIN, National Chiao Tung University, Taiwan
Valentin A. DEDIU, CNR-ISMS Bologna, Italy
Damien DELERUYELLE, IM2NP – Polytech, France
Victor EROKHIN, University of Parma, Italy
Ludovic GOUX, Imec, Belgium
Julie GROLLIER, CNRS/Thales, France
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Tsuyoshi HASEGAWA, NIMS, Japan
Cheol Seong HWANG, Seoul National University, South Korea
Hyunsang HWANG, POSTECH, South Korea
Daniele IELMINI, Politecnico di Milano, Italy
Anquan JIANG, Fudan University, China
Jinfeng KANG, Peking University, China
Alexander V. KOLOBOV, AIST, Japan
Bart J. KOOI, University of Groningen, Netherlands
Luca LARCHER, University of Modena e Reggio Emilia, Italy
Chrong Jung LIN, National Tsing Hua University, Taiwan
Ming LIU, Institute of Microelectronics, CAS, China
Massimo LONGO, CNR-IMM, Italy
Thomas MIKOLAJICK, Nam-Lab, Germany
Janice H. NICKEL, Hewlett-Packard Labs, USA
Lucian PREJBEANU, Spintec, France
Dafinè RAVELOSONA, Université Paris Sud, France
Yakov ROIZIN, Tower Jazz, Israel
Jennifer RUPP, ETH Zurich, Switzerland
Abu SEBASTIAN, IBM, Switzerland
Santiago SERRANO-GUISAN, International Iberian Nanotechnology Laboratory (INL), Portugal
Veronique SOUSA, CEA-LETI, France
Dmitri STRUKOV, University of California, Santa Barbara, USA
Eisuke TOKUMITSU, JAIST, Japan
Jianhua (Joshua) YANG, University of Massachusetts, USA
Marco BERNASCONI, University of Milano-Bicocca, Italy
Blanka MAGYARI-KÖPE, Stanford University, USA
Hideo OHNO, Tohoku University, Japan
Programme Chair:
Sabina SPIGA, CNR-IMM, Agrate Brianza, Italy
Members:
Marin ALEXE, The University of Warwick, UK
I-Wei CHEN, University of Pennsylvania, USA
Wen-Chang CHEN, National Taiwan University, Taiwan
Albert CHIN, National Chiao Tung University, Taiwan
Valentin A. DEDIU, CNR-ISMS Bologna, Italy
Damien DELERUYELLE, IM2NP – Polytech, France
Victor EROKHIN, University of Parma, Italy
Ludovic GOUX, Imec, Belgium
Julie GROLLIER, CNRS/Thales, France
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Tsuyoshi HASEGAWA, NIMS, Japan
Cheol Seong HWANG, Seoul National University, South Korea
Hyunsang HWANG, POSTECH, South Korea
Daniele IELMINI, Politecnico di Milano, Italy
Anquan JIANG, Fudan University, China
Jinfeng KANG, Peking University, China
Alexander V. KOLOBOV, AIST, Japan
Bart J. KOOI, University of Groningen, Netherlands
Luca LARCHER, University of Modena e Reggio Emilia, Italy
Chrong Jung LIN, National Tsing Hua University, Taiwan
Ming LIU, Institute of Microelectronics, CAS, China
Massimo LONGO, CNR-IMM, Italy
Thomas MIKOLAJICK, Nam-Lab, Germany
Janice H. NICKEL, Hewlett-Packard Labs, USA
Lucian PREJBEANU, Spintec, France
Dafinè RAVELOSONA, Université Paris Sud, France
Yakov ROIZIN, Tower Jazz, Israel
Jennifer RUPP, ETH Zurich, Switzerland
Abu SEBASTIAN, IBM, Switzerland
Santiago SERRANO-GUISAN, International Iberian Nanotechnology Laboratory (INL), Portugal
Veronique SOUSA, CEA-LETI, France
Dmitri STRUKOV, University of California, Santa Barbara, USA
Eisuke TOKUMITSU, JAIST, Japan
Jianhua (Joshua) YANG, University of Massachusetts, USA
Marco BERNASCONI, University of Milano-Bicocca, Italy
Miryam BUCHBINDER, Towerjazz, Israel
Raffaella CALARCO, Paul-Drude-Institute, Germany
Bernard DIENY, CEA/Spintec, France
Paolo FANTINI, Micron, Italy
Bin GAO, Peking University, China
Vincent GARCIA, CNRS/Thales, France
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Daniele IELMINI, Politecnico di Milano, Italy
Antony KENYON, University College London, UK
Massimo LONGO, CNR-IMM, Italy
Vladimir NIKITIN, Samsung Electronics, USA
Yu NISHITANI, Panasonic, Japan
Hideo OHNO, Tohoku University, Japan
Dorothée PETIT, University of Cambridge, UK
Dafinè RAVELOSONA / Liza HERRERA, Université Paris Sud, France
Moonhor REE, Pohang University, South Korea
Dan RITTER, Technion, Israel / Eilam YALON, Stanford University, USA
Jennifer RUPP / Rafael SCHMITT, ETH Zurich, Switzerland
Martin SALINGA, RWTH Aachen University, Germany
Akihito SAWA, AIST, Japan
Uwe SCHROEDER, NaMLab GmbH, Germany
Abu SEBASTIAN, IBM Research, Switzerland
Ronald TETZLAFF, Dresden University of Technology, Germany
Ilia VALOV, RWTH Aachen University, Germany
Jianhua Joshua YANG, University of Massachusetts, USA
Miryam BUCHBINDER, Towerjazz, Israel
Raffaella CALARCO, Paul-Drude-Institute, Germany
Bernard DIENY, CEA/Spintec, France
Paolo FANTINI, Micron, Italy
Bin GAO, Peking University, China
Vincent GARCIA, CNRS/Thales, France
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Daniele IELMINI, Politecnico di Milano, Italy
Antony KENYON, University College London, UK
Massimo LONGO, CNR-IMM, Italy
Vladimir NIKITIN, Samsung Electronics, USA
Yu NISHITANI, Panasonic, Japan
Hideo OHNO, Tohoku University, Japan
Dorothée PETIT, University of Cambridge, UK
Dafinè RAVELOSONA / Liza HERRERA, Université Paris Sud, France
Moonhor REE, Pohang University, South Korea
Dan RITTER, Technion, Israel / Eilam YALON, Stanford University, USA
Jennifer RUPP / Rafael SCHMITT, ETH Zurich, Switzerland
Martin SALINGA, RWTH Aachen University, Germany
Akihito SAWA, AIST, Japan
Uwe SCHROEDER, NaMLab GmbH, Germany
Abu SEBASTIAN, IBM Research, Switzerland
Ronald TETZLAFF, Dresden University of Technology, Germany
Ilia VALOV, RWTH Aachen University, Germany
Jianhua Joshua YANG, University of Massachusetts, USA
Non-volatile memory devices are currently key elements of several electronic and portable systems (digital cameras, solid state disks, smartphones, computers, e-books, tablets,..) and their market and potential applications are expected to continuously increase in the next years. Even though the Flash memory represents today the leading technology, several emerging non-volatile memory concepts, exploiting innovative inorganic and organic materials, as well as new storage mechanisms, are under investigation to achieve better performance, higher scalability, and to address novel applications. Besides pursuing the downscaling of non-volatile memories in terms of minimum size and integration density, which is approaching physical limits, the new paradigm is to develop devices that can integrate multiple functionalities, such as computing and storing information at the same time. This approach will enable the fabrication of novel nanoelectronics circuits with potential applications in several fields, including flexible electronics, computation schemes emulating the brain functionality, non-volatile logics.
This symposium will address recent advances on organic and inorganic non-volatile memory devices, with focus on innovative storage concepts beyond Flash, new materials and devices, integration schemes and selectors for the storage elements, understanding and modelling of the physical mechanisms for data storage down to the nanoscale, memristive devices and novel applications towards adaptive electronics.
This symposium will address recent advances on organic and inorganic non-volatile memory devices, with focus on innovative storage concepts beyond Flash, new materials and devices, integration schemes and selectors for the storage elements, understanding and modelling of the physical mechanisms for data storage down to the nanoscale, memristive devices and novel applications towards adaptive electronics.
Session Topics
K-1 Resistance switching memories (ReRAM)
• Electrochemical metallization (EMC) and valence change (VCM) memories
• Polymer-based and hybrid organic & inorganic memory devices
• Advanced characterization techniques, mechanisms and modelling
• 3D architectures, cross-bar arrays and selectors
• Polymer-based and hybrid organic & inorganic memory devices
• Advanced characterization techniques, mechanisms and modelling
• 3D architectures, cross-bar arrays and selectors
K-2 Phase change memories (PCM)
• New materials and concepts for PCM, including low-dimensional cells
• Theory and modelling
• Interfacial phase change memories
• Integration schemes and scaling
• Theory and modelling
• Interfacial phase change memories
• Integration schemes and scaling
K-3 Magnetic, ferroelectric and multiferroic materials for memory devices
• Tunnel junctions and spin transfer torque (STT)
• Racetrack memory and emerging three terminal magnetic device materials
• FeRAM and Ferroelectric FET
• Novel materials including organic ferroelectric and magnetic materials and nanostructures for memories
• Racetrack memory and emerging three terminal magnetic device materials
• FeRAM and Ferroelectric FET
• Novel materials including organic ferroelectric and magnetic materials and nanostructures for memories
K-4 Memristive materials, devices and emerging applications
• Novel memristive-based circuits
• Non-volatile logics
• Neuromorphic architectures, reconfigurable electronics and cognitive applications
• Non-volatile logics
• Neuromorphic architectures, reconfigurable electronics and cognitive applications